Key Features Random read performance up to 900,000 IOPS Samsung V6 (128 Layer) V-NAND® flash memory type 2,000,000 hours Mean Time Between Failure (MTBF) AES-XTS 256-bit Encryption Engine with TCG Opal 2.0 Compliant Management 1.3 DWPD for 3 years General Information Manufacturer SAMSUNG Manufacturer Part Number MZQL23T8HCLS-00A07 Product Series Pm9a3 Product Type Solid State Drive Technical Information Form Factor 2.5 Inch U.2 Product Type Pcie Gen4 X4 U.2 Ssd Capacity 3.84tb Interface Pcie Gen4 X4 Product Status Mass Production Nand Flash Memory SAMSUNG V-nand Tlc Usage Application Data Center, Server Mtbf 2.0 Million Hours Performance Sequential Read 6900 Mb/s Sequential Write 4100 Mb/s Random Read 1000k Iops Random Write 180k Iops Dwpd 1(5yrs) Physical Characteristics Dimensions 100.20x 69.85x 7.0(mm)
